Seoyong Ha

Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method

Seoyong Ha, Noel T. Nuhfer, Gregory S. Rohrer et al. · Journal of Crystal Growth · 2000 · 43 citations

Materials Engineering, Materials Science, Boron Nitride +6

Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals

Seoyong Ha, Marek Skowroński, William M. Vetter et al. · Journal of Applied Physics · 2002 · 42 citations

Engineering, Severe Plastic Deformation, Crystal Growth Technology +17

Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transport

Seoyong Ha, Noel T. Nuhfer, Gregory S. Rohrer et al. · Journal of Electronic Materials · 2000 · 32 citations

Materials Engineering, Materials Science, Engineering +7

Degradation of SiC High-Voltage pin Diodes

Seoyong Ha, J. P. Bergman · MRS Bulletin · 2005 · 10 citations

Electrical Engineering, Engineering, Power Device +2