J. P. Bergman

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Carl Hemmingsson, Nguyên Tiên Són, Olof Kordina et al. · Journal of Applied Physics · 1997 · 317 citations

Semiconductors, Semiconductor Technology, Engineering +12

Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

I. A. Buyanova, Weimin Chen, J. P. Bergman et al. · Applied Physics Letters · 1999 · 261 citations

Low-temperature Photoluminescence, Photonics, Electrical Engineering +14

Electrically active defects in <i>n</i>-type 4H–silicon carbide grown in a vertical hot-wall reactor

J. Zhang, L. Storasta, J. P. Bergman et al. · Journal of Applied Physics · 2003 · 187 citations

Engineering, Carrier Lifetime, Defect Tolerance +19

Recombination of free and bound excitons in GaN

B. Ḿonemar, J. P. Bergman, T. V. Shubina et al. · physica status solidi (b) · 2008 · 128 citations

Semiconductors, Quantum Science, Wide-bandgap Semiconductor +15

Growth of SiC by ?Hot-Wall? CVD and HTCVD

Olof Kordina, C. Hallin, Anne Henry et al. · physica status solidi (b) · 1997 · 127 citations

Engineering, Reactor Concept, Semiconductors +16