Avalanche Breakdown is a semiconductor physics phenomenon in which a rapid multiplication of charge carriers occurs due to impact ionization under high reverse-bias electric fields across a p-n junction, leading to a sudden increase in current conduction.
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Laser-induced breakdown by impact ionization in SiO2 with pulse widths from 7 ns to 150 fs
D. Du, X. Liu, G. Korn et al. · Applied Physics Letters · 1994 · 823 citations · Full text
Laser-induced electric breakdown in solids
N. Bloembergen · IEEE Journal of Quantum Electronics · 1974 · 669 citations
Magnetically Self-Focussing Streams
Willard H. Bennett · Physical Review · 1934 · 638 citations
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