J.P.R. David

Avalanche multiplication noise characteristics in thin GaAs p/sup +/-i-n/sup +/ diodes

K.F. Li, Duu Sheng Ong, J.P.R. David et al. · IEEE Transactions on Electron Devices · 1998 · 145 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

S. Pellegrini, Ryan E. Warburton, L. J. J. Tan et al. · IEEE Journal of Quantum Electronics · 2006 · 142 citations · Full text

Photonic Device, Photonics, Electrical Engineering +13

Temperature Dependence of Impact Ionization in Submicrometer Silicon Devices

D. J. Massey, J.P.R. David, G.J. Rees · IEEE Transactions on Electron Devices · 2006 · 109 citations

Engineering, Microscopy, Temperature Dependence +19

A simple model to determine multiplication and noise in avalanche photodiodes

Duu Sheng Ong, K. F. Li, G.J. Rees et al. · Journal of Applied Physics · 1998 · 108 citations

Engineering, Simple Model, Avalanche Photodiodes +20

Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes

Xin Yi, Shiyu Xie, Baolai Liang et al. · Nature Photonics · 2019 · 98 citations

Engineering, Noise, Instrumentation +3