Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

S. Pellegrini, Ryan E. Warburton, L. J. J. Tan, Jo Shien Ng, A. B. Krysa, K. M. Groom, J.P.R. David, S. Cova, M.J. Robertson, Gerald S. Buller

IEEE Journal of Quantum Electronics · 2006 · 148 citations · 21 references

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Abstract

This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.

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