Concepedia
Statistics
Publications
11
Citations
876
H-Index
10
Active since
1965
Affiliations
NTT (Japan)(Current)
Nokia (United States)
RAND Corporation
G. Gibbons is an author at NTT (Japan) specializing in electrical engineering, engineering, and semiconductor devices.
Publications per year
1965–1972
AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED <i>p-n</i> JUNCTIONS IN Ge, Si, GaAs, AND GaP
Simon M. Sze, G. Gibbons · Applied Physics Letters · 1966 · 441 citations
Engineering, Electrical Engineering, Condensed Matter Physics +9
Effect of junction curvature on breakdown voltage in semiconductors
Simon M. Sze, G. Gibbons · Solid-State Electronics · 1966 · 263 citations
Engineering, Electrical Engineering, Materials Science +14
Temperature and current distribution in an avalanching p-n junction
G. Gibbons, T. Misawa · Solid-State Electronics · 1968 · 34 citations
Engineering, Electrical Engineering, Physics +14
Transient temperature response of an avalanche diode
G. Gibbons · Solid-State Electronics · 1970 · 23 citations
Engineering, Electrical Engineering, Electronic Materials +12
The effect of unswept epitaxial material on the microwave efficiency of IMPATT diodes
S.R. Kovel, G. Gibbons · Proceedings of the IEEE · 1967 · 20 citations
Engineering, Electrical Engineering, Materials Science +11
1–5 of 11