Concepedia

G. Gibbons

GG

11

Publications

874

Citations

10

H-Index

1965

Active since

Affiliations

NTT (Japan)(Current)

Nokia (United States)

RAND Corporation

G. Gibbons is an author at NTT (Japan) specializing in engineering, electrical engineering, and applied physics.

Top concepts

Electrical EngineeringEngineeringApplied PhysicsMicroelectronicsOptoelectronicsElectronic EngineeringMicrowave EngineeringPhysicsOscillatorsElectrical Insulation

Publications per year

1965–1972

11

Publications

11

AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED <i>p-n</i> JUNCTIONS IN Ge, Si, GaAs, AND GaP

Simon M. Sze, G. Gibbons · Applied Physics Letters · 1966 · 440 citations

Semiconductor Technology, Electrical Engineering, Engineering +5

Effect of junction curvature on breakdown voltage in semiconductors

Simon M. Sze, G. Gibbons · Solid-State Electronics · 1966 · 262 citations

Electrical Engineering, Time-dependent Dielectric Breakdown, Junction Curvature +1

Temperature and current distribution in an avalanching p-n junction

G. Gibbons, T. Misawa · Solid-State Electronics · 1968 · 34 citations

Electrical Engineering, Engineering, Bias Temperature Instability +5

Transient temperature response of an avalanche diode

G. Gibbons · Solid-State Electronics · 1970 · 23 citations

Electrical Engineering, Engineering, Electronic Engineering +5

The effect of unswept epitaxial material on the microwave efficiency of IMPATT diodes

S.R. Kovel, G. Gibbons · Proceedings of the IEEE · 1967 · 20 citations

Impatt Diodes, Experimental Results, Electrical Engineering +12

Rows per page

1–5 of 11