K. M. Groom

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Hauyu Baobab Liu, Ian R. Sellers, T. J. Badcock et al. · Applied Physics Letters · 2004 · 270 citations

Engineering, Electrical Engineering, Materials Science +17

Inversion of exciton level splitting in quantum dots

Robert J. Young, R. M. Stevenson, A. J. Shields et al. · Physical Review B · 2005 · 198 citations · Full text

Natural Sciences, Physics, Condensed Matter Physics +13

Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

S. Pellegrini, Ryan E. Warburton, L. J. J. Tan et al. · IEEE Journal of Quantum Electronics · 2006 · 148 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

H.Y. Liu, David Childs, T. J. Badcock et al. · IEEE Photonics Technology Letters · 2005 · 146 citations

Engineering, Electrical Engineering, Materials Science +16

Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Hauyu Baobab Liu, M. J. Steer, T. J. Badcock et al. · Applied Physics Letters · 2005 · 127 citations

Natural Sciences, Materials Engineering, Materials Science +16