David Childs

Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

P. B. Joyce, T. J. Krzyzewski, G. R. Bell et al. · Physical review. B, Condensed matter · 2000 · 211 citations

Optical Materials, Engineering, Semiconductor Nanostructures +16

High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

H.Y. Liu, David Childs, T. J. Badcock et al. · IEEE Photonics Technology Letters · 2005 · 145 citations

Quantum Photonics, Engineering, Laser Applications +16

1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Ian R. Sellers, H.Y. Liu, K. M. Groom et al. · Electronics Letters · 2004 · 127 citations

Scanning transmission-electron microscopy study of InAs/GaAs quantum dots

Philip Siverns, S. Malik, Gary E. McPherson et al. · Physical review. B, Condensed matter · 1998 · 119 citations

Semiconductors, Categoryquantum Electronics, Engineering +9

1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots

Ray Murray, David Childs, Surama Malik et al. · Japanese Journal of Applied Physics · 1999 · 97 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +16