T. J. Badcock

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Hauyu Baobab Liu, Ian R. Sellers, T. J. Badcock et al. · Applied Physics Letters · 2004 · 270 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

H.Y. Liu, David Childs, T. J. Badcock et al. · IEEE Photonics Technology Letters · 2005 · 146 citations

Engineering, Electrical Engineering, Materials Science +16

Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Hauyu Baobab Liu, M. J. Steer, T. J. Badcock et al. · Applied Physics Letters · 2005 · 127 citations

Natural Sciences, Materials Engineering, Materials Science +16

1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Ian R. Sellers, H.Y. Liu, K. M. Groom et al. · Electronics Letters · 2004 · 127 citations

Engineering, Electrical Engineering, Materials Science +17

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

Simon Hammersley, Duncan Watson‐Parris, P. Dawson et al. · Journal of Applied Physics · 2012 · 117 citations · Full text

Engineering, Electrical Engineering, Materials Science +17