Concepedia

1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Ian R. Sellers, H.Y. Liu, K. M. Groom, David Childs, David J. Robbins, T. J. Badcock, M. Hopkinson, D. J. Mowbray, M. S. Skolnick

Electronics Letters · 2004 · 127 citations · 9 references

Abstract

A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 µm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm2 are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.

References

9

Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In <sub>0.15</sub> Ga <sub>0.85</sub> As quantum well

G.T. Liu, A. Stintz, H. Li et al. · Electronics Letters · 1999 · 480 citations

Engineering, Electrical Engineering, Materials Science +16

Low-threshold oxide-confined 1.3-μm quantum-dot laser

Gyoungwon Park, O.B. Shchekin, Diana L. Huffaker et al. · IEEE Photonics Technology Letters · 2000 · 285 citations

Engineering, Electrical Engineering, Optoelectronics +14

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Hauyu Baobab Liu, Ian R. Sellers, T. J. Badcock et al. · Applied Physics Letters · 2004 · 270 citations

Engineering, Electrical Engineering, Materials Science +17

GaAs-based long-wavelength lasers

V. M. Ustinov, A. E. Zhukov · Semiconductor Science and Technology · 2000 · 191 citations

Engineering, Electrical Engineering, Materials Science +17

1.3 µm GaAs-based laser using quantum dotsobtained byactivated spinodal decomposition

Yu. M. Shernyakov, D. A. Bedarev, E.Yu. Kondrat’eva et al. · Electronics Letters · 1999 · 132 citations

Engineering, Electrical Engineering, Materials Science +17