M. Hopkinson

Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

P. W. Fry, I. E. Itskevich, D. J. Mowbray et al. · Physical Review Letters · 2000 · 522 citations · Full text

Engineering, Physics, Quantum Device +9

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Hauyu Baobab Liu, Ian R. Sellers, T. J. Badcock et al. · Applied Physics Letters · 2004 · 269 citations

Spacer Layers, Engineering, Laser Applications +16

Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs

T Walther, A. G. Cullis, David J. Norris et al. · Physical Review Letters · 2001 · 252 citations

Semiconductors, Materials Science, Electrical Engineering +14

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Dominique Bruls, J. W. A. M. Vugs, P. M. Koenraad et al. · Applied Physics Letters · 2002 · 219 citations · Full text

Indium Distribution, Engineering, Semiconductor Nanostructures +16

Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers

D.R. Matthews, Huw D. Summers, Peter M. Smowton et al. · Applied Physics Letters · 2002 · 183 citations · Full text

Quantum Photonics, Engineering, Laser Science +23