D. J. Mowbray

Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

P. W. Fry, I. E. Itskevich, D. J. Mowbray et al. · Physical Review Letters · 2000 · 522 citations · Full text

Engineering, Physics, Quantum Device +9

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Hauyu Baobab Liu, Ian R. Sellers, T. J. Badcock et al. · Applied Physics Letters · 2004 · 269 citations

Spacer Layers, Engineering, Laser Applications +16

New physics and devices based on self-assembled semiconductor quantum dots

D. J. Mowbray, M. S. Skolnick · Journal of Physics D Applied Physics · 2005 · 175 citations

Semiconductors, Quantum Science, Materials Science +14

Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots

M. J. Steer, D. J. Mowbray, W. R. Tribe et al. · Physical review. B, Condensed matter · 1996 · 173 citations

Engineering, Photoluminescence Excitation, Luminescence Property +17

Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot

Jonathan J. Finley, P. W. Fry, A Ashmore et al. · Physical review. B, Condensed matter · 2001 · 153 citations

Categoryquantum Electronics, Quantum Science, Excess Electron Occupation +12