Applied Physics Letters · 2004 · 270 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsNanoelectronicsQuantum DotsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersDislocation MechanismsQuantum Dot DevicesQuantum Dot LasersQuantum Well LasersSelf-assembled Quantum DotsSemiconductor Quantum DotsSpacer DesignSpacer Technology
The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
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