Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Abstract

The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.