P. Lanig

Single crystal growth of SiC substrate material for blue light emitting diodes

G. Ziegler, P. Lanig, D. Theis et al. · IEEE Transactions on Electron Devices · 1983 · 196 citations

Materials Science, Semiconductors, Electrical Engineering +15

Boron-related deep centers in 6H-SiC

W. Suttrop, Gerhard Pensl, P. Lanig · Applied Physics A · 1990 · 133 citations

Boron Nitride, Engineering, Applied Physics +3

Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation

René Stein, P. Lanig, S. Leibenzeder · Materials Science and Engineering B · 1992 · 88 citations

Materials Engineering, Materials Science, 4H-sic Polytypes +9

Control of polytype formation by surface energy effects during the growth of SiC monocrystals by the sublimation method

René Stein, P. Lanig · Journal of Crystal Growth · 1993 · 47 citations

Materials Science, Materials Engineering, Engineering +11

First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor

Roland Rupp, P. Lanig, J. Völkl et al. · Journal of Crystal Growth · 1995 · 38 citations

Materials Engineering, Materials Science, Engineering +9