<i>C</i>-<i>V</i> characteristics of SiC metal-oxide-semiconductor diode with a thermally grown SiO2 layer

Abstract

C-V characteristics of Al-SiO2-SiC metal-oxide-semiconductor structures have been measured at low and high frequencies in the dark and under illumination. The oxide layer (432 Å thick) is prepared by thermal oxidation of liquid phase expitaxially grown n-type 6H-SiC using wet oxygen at 1000 °C. The accumulation, depletion, and inversion regions are clearly observed in the C-V characteristics under illumination. In the dark the inversion does not occur, probably owing to the absence of minority carriers due to the large band gap (3.0 eV) of 6H-SiC. The experimental results are briefly discussed and compared with theoretical curves.