G. Brémond - Concepedia

Author

G. Brémond

Institut National des Sciences Appliquées de Lyon ORCID

Also Known As

Blanc, D., Bremond, G, Bremond, G., Bremond, Georges, Bremond., G, Brémond, G, Brémond, G., Brémond, Georges, G Bremond, G Brémond

293

Publications

2.8K

Citations

H-Index

Concepts

All Affiliations

Institut National des Sciences Appliquées de Lyon Centre National de la Recherche Scientifique Université Claude Bernard Lyon 1 Institut des Nanotechnologies de Lyon Commissariat à l'Énergie Atomique et aux Énergies Alternatives

About

G. Brémond is an author at Institut National des Sciences Appliquées de Lyon specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	77	2K
2	Applied Physics	27	78	2K
3	Chemistry	15	17	607
4	Natural Sciences	14	14	518
5	Chemical Engineering	1	1	13

G. Brémond

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) J. Brault, M. Gendry, G. Grenet, Journal of Applied Physics Inas NanostructuresEngineeringChemistryLuminescence PropertySemiconductor Nanostructures	2002	99
From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) M. Gendry, Christelle Monat, J. Brault, Journal of Applied Physics EngineeringSemiconductor NanostructuresSemiconductorsElectronic DevicesHeight Dispersion	2004	81
Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication S. Decossas, Frédéric Mazen, T. Baron, Nanotechnology Atomic Force MicroscopyEngineeringAfm TipNanodevicesChemistry	2003	76
Optical properties of silicon nanocrystal LEDs Jorge de la Torre y Ramos, A. Souifi, A. Poncet, Physica E Low-dimensional Systems and Nanostructures Materials ScienceOptical MaterialsEngineeringSolid-state LightingPhotoluminescence	2003	69
The acceptor level of vanadium in III–V compounds B. Clerjaud, C. Naud, B. Deveaud, Journal of Applied Physics EngineeringAcceptor LevelHigh Acceptor LevelChemistryElectronic Structure	1985	69
Formation Mechanisms of ZnO Nanowires: The Crucial Role of Crystal Orientation and Polarity S. Guillemin, Laëtitia Rapenne, Hervé Roussel, The Journal of Physical Chemistry C Materials ScienceEngineeringNanoscale ChemistryNanomaterialsNanotechnology	2013	66
Influence of the Chemical Properties of the Substrate on Silicon Quantum Dot Nucleation F. Mazen, T. Baron, G. Brémond, Journal of The Electrochemical Society Siloxane GroupsEngineeringChemistrySilicon On InsulatorSilicon Quantum Dots	2003	53
Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001) Patrice Miska, Jacky Even, Charly Platz, Journal of Applied Physics Quantum ScienceExcited State PropertyPhotoluminescenceEngineeringPhysics	2004	52
Deep level spectroscopy in InP:Fe G. Brémond, A. Nouailhat, G. Guillot, Electronics Letters EngineeringNuclear PhysicsPhysicsElectron SpectroscopyNatural Sciences	1981	48
Controlling the Structural Properties of Single Step, Dip Coated ZnO Seed Layers for Growing Perfectly Aligned Nanowire Arrays S. Guillemin, Estelle Appert, Hervé Roussel, The Journal of Physical Chemistry C Structural OrderingEngineeringSingle StepNanoscale ChemistryNanostructure Synthesis	2015	45

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