T. Baron

Size Effects in Mechanical Deformation and Fracture of Cantilevered Silicon Nanowires

Michael J. Gordon, T. Baron, F. Dhalluin et al. · Nano Letters · 2009 · 192 citations

Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

B. De Salvo, G. Ghibaudo, G. Pananakakis et al. · IEEE Transactions on Electron Devices · 2001 · 144 citations

Memory Operation, Electrical Engineering, Non-volatile Memory +14

Laser diodes based on beryllium-chalcogenides

A. Waag, Frank Fischer, K. Schüll et al. · Applied Physics Letters · 1997 · 133 citations

Engineering, Laser Science, Laser Applications +16

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Reynald Alcotte, M. Martin, J. Moeyaert et al. · APL Materials · 2016 · 125 citations · Full text

Engineering, Optoelectronic Devices, Electronic Devices +16

Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales

C. Sire, S. Blonkowski, Michael J. Gordon et al. · Applied Physics Letters · 2007 · 123 citations

Engineering, Electrical Breakdown Field, Silicon On Insulator +21