J. Moeyaert

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Reynald Alcotte, M. Martin, J. Moeyaert et al. · APL Materials · 2016 · 125 citations · Full text

Engineering, Optoelectronic Devices, Electronic Devices +16

Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

M. Martin, Damien Caliste, R. Cipro et al. · Applied Physics Letters · 2016 · 54 citations · Full text

Engineering, Annealing Step, Optoelectronic Devices +18

Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

R. Cipro, T. Baron, M. Martin et al. · Applied Physics Letters · 2014 · 45 citations · Full text

Engineering, Semiconductor Materials, Selective Aspect Ratio +19

Influence of elastic properties on the strain induced by ion irradiation in crystalline materials

A. Debelle, Alexandre Boulle, Felaniaina Rakotovao et al. · Journal of Physics D Applied Physics · 2012 · 31 citations · Full text

Engineering, Crystalline Materials, Structural Materials +20

Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates

Y. Bogumilowicz, Jean‐Michel Hartmann, R. Cipro et al. · Applied Physics Letters · 2015 · 28 citations · Full text

Semiconductors, Offcut Angle, Electrical Engineering +11