Y. Bogumilowicz

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes

Jean‐Michel Hartmann, J.F. Damlencourt, Y. Bogumilowicz et al. · Journal of Crystal Growth · 2004 · 133 citations

Materials Science, Ge Layers, Electrical Engineering +11

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Reynald Alcotte, M. Martin, J. Moeyaert et al. · APL Materials · 2016 · 125 citations · Full text

Engineering, Optoelectronic Devices, Electronic Devices +16

Engineering strained silicon on insulator wafers with the Smart CutTM technology

B. Ghyselen, Jean‐Michel Hartmann, T. Ernst et al. · Solid-State Electronics · 2004 · 114 citations

Insulator Wafers, Semiconductor Technology, Electrical Engineering +8

Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations

Y. Bogumilowicz, Jean‐Michel Hartmann, R. Truche et al. · Semiconductor Science and Technology · 2004 · 85 citations

Engineering, Situ Hcl, Sige Buffers +16

High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited]

Léopold Virot, Laurent Vivien, Jean-Marc Fédéli et al. · Photonics Research · 2013 · 64 citations

Photonics, Engineering, Photodetectors +12