Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes

Measurement of Sheet Resistivities with the Four-Point Probe

F. M. Smits · Bell System Technical Journal · 1958 · 1.6K citations

Natural Sciences, Materials Engineering, Materials Science +16

Resistivity of Bulk Silicon and of Diffused Layers in Silicon

J.C. Irvin · Bell System Technical Journal · 1962 · 699 citations

Engineering, Electrical Engineering, Materials Science +17

High-quality Ge epilayers on Si with low threading-dislocation densities

Hsin-Chiao Luan, Desmond R. Lim, Kevin C. Lee et al. · Applied Physics Letters · 1999 · 677 citations

Engineering, Materials Engineering, Materials Science +16

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

M. T. Currie, Srikanth Samavedam, T. A. Langdo et al. · Applied Physics Letters · 1998 · 551 citations

Natural Sciences, Materials Engineering, Materials Science +17

Strain-induced band gap shrinkage in Ge grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, D.D. Cannon et al. · Applied Physics Letters · 2003 · 390 citations

Engineering, Materials Engineering, Materials Science +17