Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

Jean‐Michel Hartmann, Alexandra Abbadie, Anne‐Marie Papon, +7

Journal of Applied Physics

Optical MaterialsEngineeringGe-based PhotodetectorsOptoelectronic DevicesIntegrated Circuits +17

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes

Jean‐Michel Hartmann, J.F. Damlencourt, Y. Bogumilowicz, +3

Journal of Crystal Growth

Materials ScienceGe LayersElectrical EngineeringEngineeringSurface Science +9

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

L.G. Gosset, J.-F. Damlencourt, O. Renault, +7

Journal of Non-Crystalline Solids

Materials ScienceAluminium NitrideMaterial AnalysisEngineeringMaterial Characterization +5

Stable lead isotopes ratios in major french rivers and estuaries

P. Holliger, D. Petit

The Science of The Total Environment

Major French RiversBiogeochemistryEstuarine GeochemistryEngineeringEstuarine Hydrodynamics +6

SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition

Jean‐Michel Hartmann, V. Loup, G. Rolland, +4

Journal of Crystal Growth

Materials EngineeringMaterials ScienceEngineeringSurface ScienceApplied Physics +6

Organic matter and containment of uranium and fissiogenic isotopes at the Oklo natural reactors

Bartholomew Nagy, F. Gauthier-Lafaye, P. Holliger, +5

Nature

Organic GeochemistryEnvironmental ChemistryNuclear Waste ManagementEngineeringNuclear Fission +11

Interface properties of ultra-thin HfO2 films grown by atomic layer deposition on SiO2/Si

O. Renault, D. Samour, D. Rouchon, +4

Thin Solid Films

Materials ScienceEngineeringSurface ScienceApplied PhysicsUltra-thin Hfo2 Films +7

Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains

Jean‐Michel Hartmann, L. Clavelier, C. Jahan, +4

Journal of Crystal Growth

Electrical EngineeringEpitaxial GrowthSelective Epitaxial GrowthEngineeringApplied Physics +5

SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs ₂ ⁺ ions

P. Holliger, F. Laugier, J.C. Dupuy

Surface and Interface Analysis

Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates

Jean‐Michel Hartmann, Alexandra Abbadie, M. Vinet, +5

Journal of Crystal Growth

Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringMicrofabrication +7