L.G. Gosset

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

L.G. Gosset, J.-F. Damlencourt, O. Renault et al. · Journal of Non-Crystalline Solids · 2002 · 125 citations

Materials Science, Aluminium Nitride, Material Analysis +7

Angle-resolved x-ray photoelectron spectroscopy of ultrathin Al2O3 films grown by atomic layer deposition

O. Renault, L.G. Gosset, D. Rouchon et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2002 · 116 citations

Materials Science, Oxide Heterostructures, Ultrathin Al2o3 Films +14

Characterization and integration of a CVD porous SiOCH (k<2.5) with enhanced mechanical properties for 65 nm CMOS interconnects and below

L.L. Chapelon, V. Arnal, M. Broekaart et al. · Microelectronic Engineering · 2004 · 36 citations

Materials Science, Electrical Engineering, Engineering +13

Advanced Cu interconnects using air gaps

L.G. Gosset, A. Farcy, J. de Pontcharra et al. · Microelectronic Engineering · 2005 · 30 citations

3D Ic Architecture, Electrical Engineering, Engineering +7

Incorporation of oxygen and nitrogen in ultrathin films of SiO2 annealed in NO

I. J. R. Baumvol, J.‐J. Ganem, L.G. Gosset et al. · Applied Physics Letters · 1998 · 28 citations

Materials Science, Materials Engineering, Chemical Engineering +15