J.F. Damlencourt

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes

Jean‐Michel Hartmann, J.F. Damlencourt, Y. Bogumilowicz et al. · Journal of Crystal Growth · 2004 · 133 citations

Materials Science, Ge Layers, Electrical Engineering +11

Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation

Mathieu Rouvière, Laurent Vivien, Xavier Le Roux et al. · Applied Physics Letters · 2005 · 83 citations

Ii-vi Semiconductor, Photonics, Electrical Engineering +13

75 nm damascene metal gate and high-k integration for advanced CMOS devices

B. Guillaumot, X. Garros, F. Lime et al. · 2003 · 69 citations

Low-power Electronics, Electrical Engineering, Low Ioff +14

Strained tunnel FETs with record I<inf>ON</inf>: first demonstration of ETSOI TFETs with SiGe channel and RSD

A. Villalon, C. Le Royer, M. Cassé et al. · 2012 · 65 citations

Tunnelling Improvements, Semiconductor Technology, Electrical Engineering +14

High quality Germanium-On-Insulator wafers with excellent hole mobility

Quang Trung Nguyen, J.F. Damlencourt, Benjamin Vincent et al. · Solid-State Electronics · 2007 · 63 citations

Semiconductor Technology, Electrical Engineering, Engineering +6