F. Lime - Concepedia

Author

F. Lime

Universitat Rovira i Virgili ORCID

Also Known As

F LIME, F Lime, F. Lime, FRANÇOIS LIME, Francois Lime, FranÇois Lime, François Lime, Lime, F.

Publications

835

Citations

H-Index

Concepts

All Affiliations

Universitat Rovira i Virgili Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble Laboratoire d'Électronique des Technologies de l'Information Institut de Microélectronique, Electromagnétisme et Photonique

About

F. Lime is an author at Universitat Rovira i Virgili specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	22	666
2	Electrical Engineering	17	22	666
3	Applied Physics	14	17	513
4	Computer Engineering	3	3	103
5	Materials Engineering	1	1	19

F. Lime

Publications

676

Citations

H-Index

Page 1

	Year	Citations
75 nm damascene metal gate and high-k integration for advanced CMOS devices B. Guillaumot, X. Garros, F. Lime, Low-power ElectronicsElectrical EngineeringLow IoffEngineeringVlsi Design	2003	69
A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects F. Lime, Oana Moldovan IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringCircuit AnalysisEngineeringSemiconductor Device	2008	69
Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric F. Lime, K. Oshima, M. Cassé, Solid-State Electronics Electrical EngineeringMetal GateEngineeringCarrier MobilityElectronic Engineering	2003	55
A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics F. Lime, Oana Moldovan IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringCylindrical CoordinatesCompact ModelEngineering	2014	48
Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides F. Lime, C. Guiducci, R. Clerc, Solid-State Electronics Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringApplied Physics	2003	44
Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs F. Andrieu, T. Ernst, F. Lime, Device ModelingElectrical EngineeringHigh Field TransportEngineeringPhysics	2005	42
Temperature enhancement of terahertz responsivity of plasma field effect transistors O. A. Klimenko, W. Knap, Dominique Coquillat, Journal of Applied Physics Thz PhotonicsTerahertz TechnologyEngineeringTerahertz PhotonicsThz Detectors	2012	37
A simple compact model for long-channel junctionless Double Gate MOSFETs F. Lime, Ernesto Santana Solid-State Electronics Device ModelingElectrical EngineeringEngineeringCircuit DesignComputer Engineering	2012	36
A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part II: Total Charges and Intrinsic Capacitance Characteristics Oana Moldovan, F. Lime IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringIntrinsic Capacitance CharacteristicsEngineeringSemiconductor Device	2014	31
3D analytical modelling of subthreshold characteristics in vertical Multiple-gate FinFET transistors R. Ritzenthaler, F. Lime, Olivier Faynot, Solid-State Electronics Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics	2011	28

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