Concepedia

Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric

F. Lime, K. Oshima, M. Cassé, G. Ghibaudo, S. Cristoloveanu, B. Guillaumot, Hiroshi Iwai

Solid-State Electronics · 2003 · 55 citations · 2 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportCharge Carrier TransportCmos Circuit DesignDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsCarrier MobilityCarrier Transport MechanismsCharge Carrier MobilityGate Dielectric EngineeringGate OxidesMetal Gate ElectrodesMetal Gates

References

2

Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors

P. J. McWhorter, P.S. Winokur · Applied Physics Letters · 1986 · 774 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides

F. Lime, C. Guiducci, R. Clerc et al. · Solid-State Electronics · 2003 · 44 citations · Full text

Engineering, Electrical Engineering, Materials Science +16