B. Guillaumot

Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

B. De Salvo, G. Ghibaudo, G. Pananakakis et al. · IEEE Transactions on Electron Devices · 2001 · 144 citations

Memory Operation, Electrical Engineering, Non-volatile Memory +14

Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

M. Cassé, L. Thévenod, B. Guillaumot et al. · IEEE Transactions on Electron Devices · 2006 · 131 citations

Device Modeling, Electrical Engineering, Physical Insight +14

Bonded planar double-metal-gate NMOS transistors down to 10 nm

M. Vinet, T. Poiroux, J. Widiez et al. · IEEE Electron Device Letters · 2005 · 128 citations

Alignment Marks, Electrical Engineering, Engineering +7

Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

F. Fillot, T. Morel, S. Minoret et al. · Microelectronic Engineering · 2005 · 119 citations

Materials Science, Materials Engineering, Chemical Engineering +10

15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

C. Dupré, A. Hubert, Stéphane Bécu et al. · 2008 · 111 citations

Co-processed Finfet, Engineering, Integrated Circuits +17