B. Guillaumot - Concepedia

Author

B. Guillaumot

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Also Known As

B Guillaumot, B. Guillaumot, Bernard Guillaumot, Guillaumot, B.

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble STMicroelectronics (France)Laboratoire d'Électronique des Technologies de l'Information Université Grenoble Alpes

About

B. Guillaumot is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in engineering, microelectronics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	36	1.5K
2	Applied Physics	20	30	1.3K
3	Social Sciences	1	1	66
4	Chemical Engineering	1	1	119
5	Chemistry	1	1	119

B. Guillaumot

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices B. De Salvo, G. Ghibaudo, G. Pananakakis, IEEE Transactions on Electron Devices Memory OperationElectrical EngineeringNon-volatile MemoryEngineeringNatural Nitride Traps	2001	144
Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters M. Cassé, L. Thévenod, B. Guillaumot, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringPhysical InsightMetal GateEngineering	2006	131
Bonded planar double-metal-gate NMOS transistors down to 10 nm M. Vinet, T. Poiroux, J. Widiez, IEEE Electron Device Letters Alignment MarksElectrical EngineeringEngineeringNanoelectronicsScaling Rules	2005	128
Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3 F. Fillot, T. Morel, S. Minoret, Microelectronic Engineering Materials ScienceMaterials EngineeringChemical EngineeringBoron NitrideEngineering	2005	119
15nm-diameter 3D stacked nanowires with independent gates operation: &#x03A6;FET C. Dupré, A. Hubert, Stéphane Bécu, Co-processed FinfetEngineeringIntegrated CircuitsIndependent-gate FinfetSemiconductor Device	2008	111
Characterization and modeling of hysteresis phenomena in high K dielectrics C. Leroux, Jérôme Mitard, G. Ghibaud, Electrical EngineeringDielectricsEngineeringVlsi DesignBias Temperature Instability	2005	107
75 nm damascene metal gate and high-k integration for advanced CMOS devices B. Guillaumot, X. Garros, F. Lime, Low-power ElectronicsElectrical EngineeringLow IoffEngineeringVlsi Design	2003	69
Experimental and theoretical investigation of nonvolatile memory data-retention B. De Salvo, G. Ghibaudo, G. Pananakakis, IEEE Transactions on Electron Devices Non-volatile MemoryEngineeringSocial SciencesMemoryMemory Device	1999	66
Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack T. Ernst, C. Dupré, Christian Isheden, EngineeringHfo2/tin Gate StackFinfet ProcessSemiconductor MaterialsIntegrated Circuits	2006	61
Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric F. Lime, K. Oshima, M. Cassé, Solid-State Electronics Electrical EngineeringMetal GateEngineeringCarrier MobilityElectronic Engineering	2003	55

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