Stéphane Bécu

15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

C. Dupré, A. Hubert, Stéphane Bécu et al. · 2008 · 111 citations

Engineering, Electrical Engineering, Microelectronics +16

Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?

T. Ernst, Laurent Duraffourg, C. Dupré et al. · 2008 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides

Stéphane Bécu, S. Crémer, Jean‐Luc Autran · Applied Physics Letters · 2006 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +17

Study of an Al₂O₃/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage <i>V</i>_TH

Laura Vauche, Antoine Chanuel, E. Martínez et al. · ACS Applied Electronic Materials · 2021 · 33 citations

Engineering, Materials Engineering, Materials Science +17

Electrical properties in low temperature range (5K–300K) of Tantalum Oxide dielectric MIM capacitors

E. Deloffre, L. Montès, G. Ghibaudo et al. · Microelectronics Reliability · 2005 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +16