Concepedia

Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?

T. Ernst, Laurent Duraffourg, C. Dupré, Émilie Bernard, Philippe Andreucci, Stéphane Bécu, E. Ollier, A. Hubert, Cécile Halté, Julien Buckley,

2008 · 51 citations · 6 references

DOI

Abstract

Both CMOS scaling and NEMS sensor devices scaling converge to the same type of sub 100 nm objects. This opens new fields of application for IC chips integrating both complex signal treatment and very highly sensitive sensing functionalities.

References

6

Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

Yi Cui, Qingqiao Wei, Hongkun Park et al. · Science · 2001 · 5.8K citations

Engineering, Bioengineering, Biotechnology +17

Towards the silicon nanowire-based sensor for intracellular biochemical detection

Inkyu Park, Zhiyong Li, Xuema Li et al. · Biosensors and Bioelectronics · 2006 · 113 citations

Engineering, Bioengineering, Cell Biology +14

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

C. Durand, F. Casset, P. Renaux et al. · IEEE Electron Device Letters · 2008 · 51 citations · Full text

Engineering, Electrical Engineering, Mechanical Engineering +17

Hydrogen annealing of arrays of planar and vertically stacked Si nanowires

E. Dornel, T. Ernst, J.-Ch. Barbé et al. · Applied Physics Letters · 2007 · 50 citations

Natural Sciences, Materials Engineering, Materials Science +17

Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack

Émilie Bernard, T. Ernst, B. Guillaumot et al. · 2008 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +13

Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?

Concepts

Abstract

References