Cmos Scaling

CMOS Scaling is a technological framework in semiconductor device engineering that refers to the systematic reduction of transistor dimensions and associated interconnect features in complementary metal-oxide-semiconductor technology to enhance performance, reduce power consumption, and increase circuit density.

4.8K

Publications

234.4K

Citations

17.8K

Authors

1.7K

Institutions

Publications per year

2017–2026

921

Variants

Cmos Device Scaling

Authors

17.8K

  1. KR
    Kaushik Roy

    Purdue University West Lafayette, United States

    40 publications · 2K citations

    26

    h-index

  2. SB
    Shekhar Borkar

    Intel (United States), United States

    32 publications · 3.3K citations

    25

    h-index

  3. AP
    Anantha P. Chandrakasan

    Massachusetts Institute of Technology, United States

    32 publications · 7.7K citations

    23

    h-index

  4. VD
    Vivek De

    Intel (United States), United States

    28 publications · 1.8K citations

    20

    h-index

  5. LW
    L. W. Massengill

    Vanderbilt University, United States

    24 publications · 1.3K citations

    19

    h-index

1–5 of 17.8K

Venues

  1. IEEE Journal of Solid-State Circuits

    314 publications · 27.3K citations

    88

    h-index

  2. IEEE Transactions on Electron Devices

    244 publications · 15.1K citations

    64

    h-index

  3. 36

    h-index

  4. IEEE Electron Device Letters

    96 publications · 4.9K citations

    36

    h-index

  5. IEEE Transactions on Nuclear Science

    68 publications · 4.8K citations

    35

    h-index

1–5