Nanoscale Transistors

Nanoscale Transistors is a semiconductor device that operates at the nanometer scale, distinguished from conventional transistors by its critical dimensions—such as gate length and channel width—being reduced to below 100 nanometers, enabling enhanced performance and integration density in nanoelectronic circuits.

1.4K

Publications

104.8K

Citations

5.3K

Authors

944

Institutions

Publications per year

2017–2026

395

Authors

5.3K

  1. ML
    Mark Lundstrom

    Purdue University West Lafayette, United States

    24 publications · 3.4K citations

    22

    h-index

  2. PA
    Phaedon Avouris

    IBM Research - Thomas J. Watson Research Center, United States

    17 publications · 5.6K citations

    17

    h-index

  3. HP
    H.‐S. Philip Wong

    Stanford University, United States

    20 publications · 2.4K citations

    16

    h-index

  4. JA
    Joerg Appenzeller

    Purdue University West Lafayette, United States

    16 publications · 3.5K citations

    16

    h-index

  5. LP
    Lian‐Mao Peng

    Peking University, China

    13 publications · 2.1K citations

    14

    h-index

1–5 of 5.3K

Venues

  1. Nano Letters

    70 publications · 17.9K citations

    51

    h-index

  2. Applied Physics Letters

    119 publications · 8K citations

    46

    h-index

  3. IEEE Transactions on Electron Devices

    103 publications · 8K citations

    42

    h-index

  4. IEEE Electron Device Letters

    65 publications · 3.7K citations

    33

    h-index

  5. ACS Nano

    30 publications · 3.1K citations

    25

    h-index

1–5