Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

Band offsets of wide-band-gap oxides and implications for future electronic devices

John Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 2K citations

Engineering, Materials Engineering, Materials Science +17

Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH3

Jeffrey W. Elam, Mikael Schuisky, J. D. Ferguson et al. · Thin Solid Films · 2003 · 184 citations

Natural Sciences, Materials Engineering, Materials Science +16

On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

Jörgen Westlinder, T. Schram, L. Pantisano et al. · IEEE Electron Device Letters · 2003 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

H.Y. Yu, H.F. Lim, J.H. Chen et al. · IEEE Electron Device Letters · 2003 · 77 citations

Engineering, Electrical Engineering, Materials Science +17

Ru and RuO2 gate electrodes for advanced CMOS technology

K. Fröhlich, K. Hušeková, D. Machajdı́k et al. · Materials Science and Engineering B · 2004 · 61 citations

Engineering, Electrical Engineering, Materials Science +11