Concepedia

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Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

DOI

119

Citations

11

References

2005

Year

F. Fillot, T. Morel, S. Minoret, I. Maťko, S. Maı̂trejean, B. Guillaumot, B. Chenevier, T. Billon
Microelectronic Engineering

References

YearCitations

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