I. Maťko

Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

F. Fillot, T. Morel, S. Minoret et al. · Microelectronic Engineering · 2005 · 119 citations

Materials Science, Materials Engineering, Chemical Engineering +10

Origins of microstructure and stress gradients in nanocrystalline thin films: The role of growth parameters and self-organization

R. Daniel, Jozef Kečkéš, I. Maťko et al. · Acta Materialia · 2013 · 69 citations

Materials Science, Engineering, Nanomaterials +11

Self-organized periodic soft-hard nanolamellae in polycrystalline TiAlN thin films

Jozef Kečkéš, R. Daniel, Christian Mitterer et al. · Thin Solid Films · 2013 · 51 citations

Materials Science, Material Analysis, Engineering +6

Phase analysis and structure of rapidly quenched Al-Mn systems

Irena Janotová, P. Švec, P. Švec et al. · Journal of Alloys and Compounds · 2016 · 44 citations

Engineering, Physics, Applied Physics +4

Poly-Si∕TiN∕HfO2 gate stack etching in high-density plasmas

A. Le Gouil, O. Joubert, G. Cunge et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2007 · 44 citations

Gate Stack, Electrical Engineering, Plasma Electronics +14