L. Thévenod

Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

M. Cassé, L. Thévenod, B. Guillaumot et al. · IEEE Transactions on Electron Devices · 2006 · 131 citations

Device Modeling, Electrical Engineering, Physical Insight +14

On the mobility in high-κ/metal gate MOSFETs: Evaluation of the high-κ phonon scattering impact

O. Weber, M. Cassé, L. Thévenod et al. · Solid-State Electronics · 2006 · 33 citations

Semiconductor Technology, Electrical Engineering, Engineering +8

Modeling of remote Coulomb scattering limited mobility in MOSFET with HfO2/SiO2 gate stacks

Sylvain Barraud, L. Thévenod, M. Cassé et al. · Microelectronic Engineering · 2007 · 24 citations

Device Modeling, Electrical Engineering, Engineering +7

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

M. Cassé, F. Rochette, L. Thévenod et al. · Journal of Applied Physics · 2009 · 18 citations · Full text

Comprehensive Study, Magnetism, Electrical Engineering +15

Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs

O. Weber, F. Andricu, M. Cassé et al. · 2005 · 16 citations

High Mobility Sige, Electrical Engineering, Experimental Determination +14