M. Cassé

Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

Sylvain Barraud, Matthieu Berthomé, R. Coquand et al. · IEEE Electron Device Letters · 2012 · 259 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

Sylvain Barraud, R. Coquand, M. Cassé et al. · IEEE Electron Device Letters · 2012 · 145 citations

Electrical Engineering, Semiconductor Device, Engineering +11

3DVLSI with CoolCube process: An alternative path to scaling

P. Batude, C. Fenouillet-Béranger, L. Pasini et al. · 2015 · 134 citations

Engineering, Vlsi Design, Computer Architecture +23

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Heorhii Bohuslavskyi, A. G. M. Jansen, Sylvain Barraud et al. · IEEE Electron Device Letters · 2019 · 134 citations · Full text

Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

M. Cassé, L. Thévenod, B. Guillaumot et al. · IEEE Transactions on Electron Devices · 2006 · 131 citations

Device Modeling, Electrical Engineering, Physical Insight +14