R. Coquand - Concepedia

Author

R. Coquand

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Also Known As

COQUAND, Rémi, Coquand, R., E. Augendre, R Coquand, R. Coquand, R., Coquand, Remi Coquand, Rémi Coquand

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives Laboratoire d'Électronique des Technologies de l'Information CEA Grenoble Institut polytechnique de Grenoble STMicroelectronics (France)

About

R. Coquand is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	929
2	Applied Physics	15	17	898
3	Electrical Engineering	15	18	929
4	Computer Engineering	3	3	64
5	Social Sciences	1	1	31

R. Coquand

Publications

979

Citations

H-Index

Page 1

	Year	Citations
Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm Sylvain Barraud, Matthieu Berthomé, R. Coquand, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2012	259
Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm Sylvain Barraud, R. Coquand, M. Cassé, IEEE Electron Device Letters Electrical EngineeringSemiconductor DeviceEngineeringDiameter DownNanotechnology	2012	145
Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain Sylvain Barraud, V. Lapras, Marie-Pierre Samson, EngineeringInner SpacerIntegrated CircuitsSilicon On InsulatorSemiconductor Device	2016	108
Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width R. Coquand, M. Cassé, Sylvain Barraud, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringSi Nanowire	2013	68
Scaling of high-k/metal-gate Trigate SOI nanowire transistors down to 10nm width R. Coquand, Sylvain Barraud, M. Cassé, Electrical EngineeringSi Film ThicknessEngineeringSemiconductor DeviceTechnology Scaling	2012	57
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology S. Reboh, R. Coquand, Sylvain Barraud, Applied Physics Letters EngineeringRelaxed SigeSilicon On InsulatorSemiconductor DeviceMechanical Relaxation	2018	39
Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications G. Piccolboni, G. Molas, J. M. Portal, Non-volatile MemoryEngineeringVertical Resistive RamNeurochipSocial Sciences	2015	31
Strain-induced performance enhancement of tri-gate and omega-gate nanowire FETs scaled down to 10nm Width R. Coquand, M. Cassé, Sylvain Barraud, EngineeringIntegrated CircuitsSemiconductor DeviceStrain-induced Performance EnhancementSemiconductors	2012	30
Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: 300K transition to Single Electron Transistor Veeresh Deshpande, Sylvain Barraud, X. Jehl, Solid-State Electronics Trigate NanowireElectrical EngineeringEngineeringTechnology ScalingNanotechnology	2013	29
Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10nm width R. Coquand, Sylvain Barraud, M. Cassé, Solid-State Electronics Semiconductor TechnologyElectrical EngineeringNanoscale SystemEngineeringTechnology Scaling	2013	26

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