S. Denorme

FDSOI devices with thin BOX and ground plane integration for 32nm node and below

C. Fenouillet-Béranger, S. Denorme, P. Perreau et al. · Solid-State Electronics · 2009 · 130 citations

3D Ic Architecture, Electrical Engineering, Engineering +12

Efficient multi-V<inf>T</inf> FDSOI technology with UTBOX for low power circuit design

C. Fenouillet-Béranger, Olivier Thomas, P. Perreau et al. · 2010 · 69 citations

Low-power Electronics, Electrical Engineering, Engineering +12

Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below

C. Fenouillet-Béranger, P. Perreau, S. Denorme et al. · Solid-State Electronics · 2010 · 63 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm² 6T-SRAM bitcell

C. Fenouillet-Béranger, J. Todeschini, Jean-Christophe Le-Denmat et al. · 2007 · 61 citations

Pmos Transistors, Semiconductor Technology, Electrical Engineering +13

28nm advanced CMOS resistive RAM solution as embedded non-volatile memory

Antoine Benoist, S. Blonkowski, S. Jeannot et al. · 2014 · 48 citations