S. Blonkowski

Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales

C. Sire, S. Blonkowski, Michael J. Gordon et al. · Applied Physics Letters · 2007 · 127 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited Ta2O5 films

S. Blonkowski, M. Regache, A. Halimaoui · Journal of Applied Physics · 2001 · 106 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM capacitors

F. Mondon, S. Blonkowski · Microelectronics Reliability · 2003 · 62 citations

Engineering, Materials Engineering, Materials Science +14

MIM capacitance variation under electrical stress

C. Besset, S. Bruyère, S. Blonkowski et al. · Microelectronics Reliability · 2003 · 49 citations

Natural Sciences, Electrical Engineering, Materials Science +14

28nm advanced CMOS resistive RAM solution as embedded non-volatile memory

Antoine Benoist, S. Blonkowski, S. Jeannot et al. · 2014 · 48 citations

Engineering, Computer Engineering, Electrical Engineering +15