S. Bruyère

Review on high-k dielectrics reliability issues

G. Ribes, Jérôme Mitard, M. Denais et al. · IEEE Transactions on Device and Materials Reliability · 2005 · 519 citations

Dielectrics, Engineering, Semiconductor Device +16

A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment

F. Monsieur, Emmanuel Vincent, D. Roy et al. · 2003 · 118 citations

Engineering, Industrial Reliability Assessment, Reliability Criterion +19

Evidence for hydrogen-related defects during NBTl stress in p-MOSFETs

V. Huard, F. Monsieur, G. Ribes et al. · 2003 · 75 citations

Engineering, Oxide Defects, Semiconductor Device +16

MIM capacitance variation under electrical stress

C. Besset, S. Bruyère, S. Blonkowski et al. · Microelectronics Reliability · 2003 · 49 citations

Electrical Engineering, Engineering, Stress-induced Leakage Current +9

Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics

G. Ghibaudo, S. Bruyère, T. Devoivre et al. · IEEE Transactions on Semiconductor Manufacturing · 2000 · 40 citations

Engineering, Mos Structures, Semiconductor Device +17