T. Devoivre

Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics

G. Ghibaudo, S. Bruyère, T. Devoivre et al. · IEEE Transactions on Semiconductor Manufacturing · 2000 · 40 citations

Engineering, Mos Structures, Semiconductor Device +17

A functional 0.69 μm/sup 2/ embedded 6T-SRAM bit cell for 65 nm CMOS platform

F. Arnaud, F. Salvetti, D. Lenoble et al. · 2004 · 30 citations

Low Power, Electrical Engineering, Engineering +14

Low cost 65nm CMOS platform for Low Power & General Purpose applications

F. Arnaud, B. Duriez, B. Tavel et al. · 2004 · 24 citations

Low-power Electronics, Low Power, Electrical Engineering +10

Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC)

T. Devoivre, M.M. Lunenborg, C. Julien et al. · 2003 · 16 citations

Engineering, Vlsi Design, Computer Architecture +19

Capacitance–Voltage (C–V) characterization of 20 Å thick gate oxide: parameter extraction and modeling

R. Clerc, T. Devoivre, G. Ghibaudo et al. · Microelectronics Reliability · 2000 · 12 citations

Device Modeling, Electrical Engineering, Engineering +5