IEEE Transactions on Semiconductor Manufacturing · 2000 · 40 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationExtraction TechniquesMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsCarrier DiffusionEquivalent Oxide ThicknessGate Dielectric EngineeringGate DielectricsGate Oxide InterfacesGate OxidesOxide Thickness MeasurementThin Oxide Films
An improved method for the assessment of the oxide thickness applicable to advanced CMOS technologies is proposed. To this end, a proper combination of Maserjian's technique and of Vincent's method is used to alleviate the unknown parameter inherent to both extraction procedures and which depends on the employed carrier statistics. The new method has been successfully applied to various technologies with gate oxide thickness ranging from 7 nm to 1.8 nm.
4
On the oxide thickness extraction in deep-submicron technologies
Emmanuel Vincent, G. Ghibaudo, Guillaume Morin et al. · 2002 · 21 citations