F. Salvetti

A New Backscattering Model Giving a Description of the Quasi-Ballistic Transport in Nano-MOSFET

E.F. Fuchs, Philippe Dollfus, G. LeCarval et al. · IEEE Transactions on Electron Devices · 2005 · 46 citations

Engineering, Electrical Engineering, Microelectronics +16

A functional 0.69 μm/sup 2/ embedded 6T-SRAM bit cell for 65 nm CMOS platform

F. Arnaud, F. Salvetti, D. Lenoble et al. · 2004 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +17

Low cost 65nm CMOS platform for Low Power & General Purpose applications

F. Arnaud, B. Duriez, B. Tavel et al. · 2004 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +15

Ultra-Thin Fully Depleted SOI Devices with Thin BOX, Ground Plane and Strained Liner Booster

C. Gallon, A. Vandooren, F. Payet et al. · Proceedings - IEEE International SOI Conference/Proceedings · 2006 · 17 citations

Engineering, Electrical Engineering, Microelectronics +12

0.248μm/sup 2/ and 0.334μm/sup 2/ conventional bulk 6T-SRAM bit -cells for 45nm node low cost - general purpose applications

F. Arnaud, C. Boccaccio, F. Salvetti et al. · 2005 · 14 citations

Engineering, Computer Engineering, Electrical Engineering +16