S. Jeannot

On the Origin of Low-Resistance State Retention Failure in HfO₂-Based RRAM and Impact of Doping/Alloying

Boubacar Traoré, P. Blaise, Elisa Vianello et al. · IEEE Transactions on Electron Devices · 2015 · 84 citations

Natural Sciences, Materials Engineering, Materials Science +12

28nm advanced CMOS resistive RAM solution as embedded non-volatile memory

Antoine Benoist, S. Blonkowski, S. Jeannot et al. · 2014 · 48 citations

Engineering, Computer Engineering, Electrical Engineering +15

Endurance/Retention Trade Off in HfOx and TaOx Based RRAM

M. Azzaz, Elisa Vianello, B. Sklénard et al. · 2016 · 36 citations

Engineering, Materials Engineering, Electronic Materials +15

Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO<inf>2</inf>-RRAM integrated in a 65nm CMOS technology

T. Diokh, Elise Le-Roux, S. Jeannot et al. · 2013 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Microscopic understanding of the low resistance state retention in HfO<inf>2</inf> and HfAlO based RRAM

Boubacar Traoré, P. Blaise, Elisa Vianello et al. · 2014 · 30 citations

Natural Sciences, Materials Engineering, Materials Science +10