S. Jeannot - Concepedia

Author

S. Jeannot

STMicroelectronics (France)

Also Known As

Jeannot, S, Jeannot, S., Jeannot, Simon, S. Jeannot, Simon Jeannot

Publications

477

Citations

H-Index

Concepts

All Affiliations

STMicroelectronics (France)Commissariat à l'Énergie Atomique et aux Énergies Alternatives Laboratoire d'Électronique des Technologies de l'Information CEA Grenoble Institut polytechnique de Grenoble

About

S. Jeannot is an author at STMicroelectronics (France) specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	341
2	Applied Physics	10	11	294
3	Electrical Engineering	10	11	298
4	Computer Engineering	4	4	76
5	Computer Science	1	1	13

S. Jeannot

Publications

421

Citations

H-Index

Page 1

	Year	Citations
On the Origin of Low-Resistance State Retention Failure in HfO<sub>2</sub>-Based RRAM and Impact of Doping/Alloying Boubacar Traoré, P. Blaise, Elisa Vianello, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringOxygen VacancyEngineering	2015	84
28nm advanced CMOS resistive RAM solution as embedded non-volatile memory Antoine Benoist, S. Blonkowski, S. Jeannot,	2014	48
Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO<inf>2</inf>-RRAM integrated in a 65nm CMOS technology T. Diokh, Elise Le-Roux, S. Jeannot, Electrical EngineeringEngineeringDisturb ImmunityElectronic MemoryEmerging Memory Technology	2013	35
Endurance/Retention Trade Off in HfOx and TaOx Based RRAM M. Azzaz, Elisa Vianello, B. Sklénard, EngineeringMemory DesignEmerging Memory TechnologyComputer ArchitectureComputer Memory	2016	34
Microscopic understanding of the low resistance state retention in HfO<inf>2</inf> and HfAlO based RRAM Boubacar Traoré, P. Blaise, Elisa Vianello, Microscopic UnderstandingEngineeringEmerging Memory TechnologyDiffusion Barrier CalculationsOxygen Vacancy	2014	30
Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications A. Salaün, H. Grampeix, Julien Buckley, Thin Solid Films Non-volatile MemoryElectrical EngineeringEngineeringEmerging Memory TechnologyApplied Physics	2012	28
Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology T. Diokh, Elise Le-Roux, S. Jeannot, Thin Solid Films Semiconductor TechnologyNon-volatile MemoryElectrical EngineeringEngineeringNanoelectronics	2012	25
Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3 M. Azzaz, Antoine Benoist, Elisa Vianello, Solid-State Electronics Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringO 3	2016	23
Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network Daniele Garbin, Quentin Rafhay, Elisa Vianello, EngineeringHigh Resistance StateResistorNanoelectronicsOxram Variability	2015	16
Metal-insulator-metal capacitors’ current instability improvement using dielectric stacks to prevent oxygen vacancies formation J.‐P. Manceau, S. Bruyère, S. Jeannot, Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringDielectric StacksOxygen Vacancy Formation	2007	15

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