Efficient multi-V<inf>T</inf> FDSOI technology with UTBOX for low power circuit design

Abstract

For the first time, Multi-V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> UTBOX-FDSOI technology for low power applications is demonstrated. We highlight the effectiveness of back biasing for short devices in order to achieve I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> current improvement by 45% for LVT options at an I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> current of 23nA/µm and a leakage reduction by 2 decades for the HVT one. In addition, fully functional 0.299um <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> bitcells with 290mV SNM at 1.1V and Vb=0V operation were obtained. We also demonstrate on ring oscillators and 0.299µm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> SRAM bitcells the effectiveness (ΔV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> versus V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</inf> ∼ 208mV/V) of the conventional bulk reverse and forward back biasing approaches to manage the circuit static power and the dynamic performances.