L. Tosti

High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

O. Weber, O. Faynot, F. Andrieu et al. · 2008 · 159 citations

Engineering, Electrical Engineering, Materials Science +17

Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

V. Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin et al. · IEEE Transactions on Nuclear Science · 2006 · 153 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17

Advances, challenges and opportunities in 3D CMOS sequential integration

P. Batude, M. Vinet, B. Prévitali et al. · 2011 · 148 citations · Full text

Engineering, Materials Engineering, Materials Science +17

FDSOI devices with thin BOX and ground plane integration for 32nm node and below

C. Fenouillet-Béranger, S. Denorme, P. Perreau et al. · Solid-State Electronics · 2009 · 133 citations

Engineering, Computer Engineering, Electrical Engineering +11

Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

M. Cassé, L. Thévenod, B. Guillaumot et al. · IEEE Transactions on Electron Devices · 2006 · 131 citations

Engineering, Electrical Engineering, Physics +17