O. Faynot

Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

Sylvain Barraud, Matthieu Berthomé, R. Coquand et al. · IEEE Electron Device Letters · 2012 · 259 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +15

High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

O. Weber, O. Faynot, F. Andrieu et al. · 2008 · 159 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

V. Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin et al. · IEEE Transactions on Nuclear Science · 2006 · 151 citations

Engineering, Nuclear Physics, Vlsi Design +22

Advances, challenges and opportunities in 3D CMOS sequential integration

P. Batude, M. Vinet, B. Prévitali et al. · 2011 · 148 citations · Full text

Materials Science, 3D Ic Architecture, Wafer Scale Processing +15

Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

Sylvain Barraud, R. Coquand, M. Cassé et al. · IEEE Electron Device Letters · 2012 · 145 citations

Electrical Engineering, Semiconductor Device, Engineering +11