Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below - Concepedia

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Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below

63

Citations

7

References

2010

Year

C. Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, F. Andrieu, O. Weber, S. Monfray, S. Barnola, C. Arvet, Y. Campidelli,

Solid-State Electronics

Electrical EngineeringSemiconductor DeviceEngineeringUltra-thin BoxAdvanced Packaging (Semiconductors)Rf SemiconductorNanoelectronicsElectronic EngineeringApplied PhysicsGround PlaneFdsoi DevicesElectronic PackagingMicroelectronicsInterconnect (Integrated Circuits)Electromagnetic Compatibility

References

	Year	Citations

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