C. Arvet

15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

C. Dupré, A. Hubert, Stéphane Bécu et al. · 2008 · 111 citations

Engineering, Electrical Engineering, Microelectronics +16

Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

Sylvain Barraud, V. Lapras, Marie-Pierre Samson et al. · 2016 · 110 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers

Laurent Brunet, P. Batude, C. Fenouillet-Béranger et al. · 2016 · 75 citations

Engineering, Computer Engineering, Electrical Engineering +16

Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below

C. Fenouillet-Béranger, P. Perreau, S. Denorme et al. · Solid-State Electronics · 2010 · 64 citations

Engineering, Computer Engineering, Electrical Engineering +17

Thin layer etching of silicon nitride: A comprehensive study of selective removal using NH3/NF3 remote plasma

N. Possémé, Vincent Ah-Leung, Olivier Pollet et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2016 · 43 citations

Engineering, Materials Engineering, Materials Science +17