T. Poiroux

Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

Sylvain Barraud, Matthieu Berthomé, R. Coquand et al. · IEEE Electron Device Letters · 2012 · 259 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Multi-$V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Jean-Philippe Noël, Olivier Thomas, Marie-Anne Jaud et al. · IEEE Transactions on Electron Devices · 2011 · 183 citations

Engineering, Computer Engineering, Electrical Engineering +17

Advances, challenges and opportunities in 3D CMOS sequential integration

P. Batude, M. Vinet, B. Prévitali et al. · 2011 · 148 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

Sylvain Barraud, R. Coquand, M. Cassé et al. · IEEE Electron Device Letters · 2012 · 145 citations

Engineering, Electrical Engineering, Materials Science +17

Multiple gate devices: advantages and challenges

T. Poiroux, M. Vinet, O. Faynot et al. · Microelectronic Engineering · 2005 · 131 citations

Engineering, Computer Engineering, Electrical Engineering +12