B. De Salvo

Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

B. De Salvo, G. Ghibaudo, G. Pananakakis et al. · IEEE Transactions on Electron Devices · 2001 · 144 citations

Engineering, Electrical Engineering, Physics +17

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

L. Perniola, Véronique Sousa, A. Fantini et al. · IEEE Electron Device Letters · 2010 · 139 citations

Engineering, Electrical Engineering, Materials Science +12

Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

Cécile Nail, G. Molas, P. Blaise et al. · 2016 · 126 citations

Engineering, Materials Engineering, Materials Science +16

HfO<sub>2</sub>-Based RRAM: Electrode Effects, Ti/HfO<sub>2</sub> Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and <italic>Ab Initio</italic> Calculations

Boubacar Traoré, P. Blaise, Elisa Vianello et al. · IEEE Transactions on Electron Devices · 2015 · 96 citations

Engineering, Materials Engineering, Materials Science +17

Carbon-doped GeTe: A promising material for Phase-Change Memories

Giovanni Betti Beneventi, L. Perniola, V. Sousa et al. · Solid-State Electronics · 2011 · 91 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14