Giovanni Betti Beneventi

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

L. Perniola, Véronique Sousa, A. Fantini et al. · IEEE Electron Device Letters · 2010 · 139 citations

Engineering, Emerging Memory Technology, Phase-change Memories +17

Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Giovanni Betti Beneventi, Elena Gnani, A. Gnudi et al. · IEEE Transactions on Electron Devices · 2014 · 94 citations

Engineering, Vlsi Design, Tunnel Field-effect Transistors +16

Carbon-doped GeTe: A promising material for Phase-Change Memories

Giovanni Betti Beneventi, L. Perniola, V. Sousa et al. · Solid-State Electronics · 2011 · 90 citations · Full text

Engineering, Electronic Memory, Applied Physics +5

Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

Giovanni Betti Beneventi, Elena Gnani, A. Gnudi et al. · IEEE Transactions on Electron Devices · 2014 · 57 citations · Full text

Electrical Engineering, Engineering, Tunneling Probability +13

Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices

Giovanni Betti Beneventi, Alessandro Calderoni, Paolo Fantini et al. · Journal of Applied Physics · 2009 · 49 citations · Full text

Semiconductors, Non-volatile Memory, Electrical Engineering +15